Electrical insulation properties of sputter-deposited SiO 2′ Si 3N 4 and Al 2O 3 films at room temperature and 400 °C

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 3, 2009, Pages 514-519

  Bartzsch, Hagen ^a   Glöß, Daniel ^a   Frach, Peter ^a   Gittner, Matthias ^b   Schultheiß, Eberhard ^a,b   Brode, Wolfgang ^c   Hartung, Johannes ^d  

^a Fraunhofer Institute for Electron Beam and Plasma Technology   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^c Siegert TFT GmbH   (Germany)

^d Von Ardenne Anlagentechnik GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN FIELDS; ELECTRICAL INSULATION LAYERS; ELECTRICAL INSULATION PROPERTIES; INSULATION PROPERTIES; ROOM TEMPERATURES; SAMPLE TEMPERATURES; SPUTTER EQUIPMENTS; TEMPERATURE RANGES;

ELECTRODEPOSITION; INDUSTRIAL APPLICATIONS; SILICON COMPOUNDS;

ALUMINUM;

EID: 63049098706     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200880481     Document Type: Article

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