The effect of annealing and chemical mechanical polishing on Ge2Sb2Te5 phase change memory

Scripta Materialia

Volumn 60, Issue 11, 2009, Pages 957-959

  Zhong, Min ^a,b   Song, Zhitang ^a   Liu, Bo ^a   Chen, Yifeng ^a,b   Gong, Yuefeng ^a,b   Rao, Feng ^a,b   Feng, Songlin ^a   Zhang, Fuxiong ^c   Xiang, Yanghui ^c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION   (China)

Author keywords

Anneal; Chemical mechanical polishing (CMP); Ge2Sb2Te5; Phase change memory (PCM)

Indexed keywords

CHEMICAL MECHANICAL POLISHING; DURABILITY; GERMANIUM; NANOTECHNOLOGY; PHASE CHANGE MEMORY; POLISHING; PULSE CODE MODULATION; TELLURIUM COMPOUNDS;

ANNEAL; BOTTOM ELECTRODES; CHEMICAL MECHANICAL POLISHING (CMP); GE2SB2TE5; PHASE CHANGE MEMORY (PCM); POWER CONSUMPTION; RESET VOLTAGES;

CHEMICAL POLISHING;

EID: 62849126863     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.scriptamat.2009.02.023     Document Type: Article

References (16)

1. Chong T.C., and Shi L.P. Appl. Phys. Lett. 88 (2006) 122114
2. Wuttig M., and Yamada N. Nat. Mater. 6 (2007) 824
3. Kim R.-Y., and Kim H.-G. Appl. Phys. Lett. 89 (2006) 102107
4. Ovshinsky S.R. Phys. Rev. Lett. 21 (1968) 1450
5. Sadeghipour S.M., Pileggi L., and Asheghi M. Thermal Thermomechanical Phenomena Electronics Syst. (2006) 600
6. Rao F., Song Z., Zhong M., Feng S., and Chen B. JJAP 46 2 (2007) L25
7. Rao F., Song Z., Wu L., Zhong M., Feng S., and Chen B. Appl. Phys. Lett. 91 (2007) 073505
8. Xu C., Song Z., Liu Bo., Feng S., and Chen B. Appl. Phys. Lett. 92 (2008) 223507
9. Bolivar P.H., Merget F., Kim D.H., Hadam B., and Kurz H. Proc. EPCOS (2004)
10. Lee S.-h., Jung Y., and agarwal R. Nat. Nanotechnol. 2 (2007) 626
11. A. Pirovano, F. Pellizzer, A. Redaelli, I. Tortorelli, E. Varesi, F. Ottogalli, M. Tosi, P. Besana, R. Cecchini, R. Piva, M. Magistretti, M. Scaravaggi, G. Mazzone, P. Petruzza, F. Bedeschi, T. Marangon, A. Modelli, D. Ielmini, A.L. Lacaita, R. Bez, Solid-State Device Res. Conf. (2005) 313. Available at: .
12. Y.H. Ha, J.H. Yi, H. Horii, J.H. Park, S.H. Joo, S.O. Park, J.T. U-In Chung Moon, An edge contact type cell for Phase Change RAM featuring very low power consumption, in: VLSI Technology, 2003. Digest of Technical Papers, Memory Div., Samsung Electron. Co. Ltd., Kyungki, South Korea, 2003, pp. 175.
13. Pandian R., Kooi B.J., and De Hosson J.Th.M. J. Appl. Phys. 100 (2006) 123511
14. Njoroge W.K., Woltgens H.W., and Wuttig W. J. Vac. Sci. Technol. A 20 (2002) 230
15. Liu Y., Song Z., Ling Y., Gong Y., and Feng S. Jpn. J. Appl. Phys. 48 (2009) 024502
16. Gong Y., Ling Y., Song Z., and Feng S. Chin. Phys. Lett. 25 (2008) 3455