Electrochemical growth of GaSb and InSb for applications in infra-red detectors and optical communication systems

Optical Materials

Volumn 6, Issue 1-2, 1996, Pages 63-67

  McChesney, J J ^a   Haigh, J ^a   Dharmadasa, I M ^a   Mowthorpe, D J ^a  

^a SHEFFIELD HALLAM UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMISTRY; ELECTRODEPOSITION; EPITAXIAL GROWTH; INFRARED DETECTORS; OPTICAL COMMUNICATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; STOICHIOMETRY; THIN FILMS; X RAY ANALYSIS; X RAY DIFFRACTION;

ELECTROCHEMICAL GROWTH; ENERGY DISPERSIVE X RAY ANALYSIS; GALLIUM ANTIMONIDE; INDIUM ANTIMONIDE;

SEMICONDUCTOR MATERIALS;

EID: 0030180884     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/0925-3467(96)00026-2     Document Type: Article

References (6)

1. K. Rajeshwar, Adv. Mater. 4 (1992) 23.
2. G.F. Fulop and J.F. Betz, US Patent No. 4,261,802 (1981).
3. M.C. Yang, U. Landau and J.C. Angus, J. Electrochem. Soc. 139 (1992) 3480.
4. Y.N. Sadana and J.P. Singh, Plat. Surf. Fin. 64 (1985) 12.
5. J. Ortega and J. Herrero, J. Electrochem. Soc. 136 (1989) 3388.
6. M. Pourbaix, Atlas of Electrochemical Equilibria in Aqueous solutions (Van Nostrand Rheinhold Company Ltd., 1971).