Catalytic and catalyst-free synthesis of CdSe nanostructures with single-source molecular precursor and related device application

Nano Letters

Volumn 9, Issue 1, 2009, Pages 437-441

  Zhang, Youxiang ^a   Tang, Yun ^a   Lee, Kwan ^a   Ouyang, Min ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AIR STABLES; BUILDING BLOCKS; CATALYST-FREE SYNTHESIS; COLLOIDAL CATALYSTS; CONTROL SYNTHESIS; CONTROLLED SIZES; DEVICE APPLICATIONS; FUNCTIONAL DEVICES; GATE VOLTAGES; METALLIC CATALYSTS; MODEL SYSTEMS; MONO-DISPERSED; NANO-SCALE; NEW OPPORTUNITIES; ONE-DIMENSIONAL; QUASI ONE-DIMENSIONAL; SINGLE-SOURCE MOLECULAR PRECURSORS; SYNTHETIC CONTROLS; THERMAL DECOMPOSITION PROCESS; VAPOR-LIQUID-SOLID MECHANISMS;

CADMIUM COMPOUNDS; CATALYSIS; CATALYSTS; ELECTRIC WIRE; NANOSTRUCTURES; PYROLYSIS; SYNTHESIS (CHEMICAL);

CADMIUM ALLOYS;

CADMIUM DERIVATIVE; CADMIUM SELENIDE; NANOMATERIAL; SELENIUM DERIVATIVE;

ARTICLE; CATALYSIS; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; INSTRUMENTATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

CADMIUM COMPOUNDS; CATALYSIS; CRYSTALLIZATION; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SELENIUM COMPOUNDS; SURFACE PROPERTIES;

EID: 61649128081     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl803352p     Document Type: Article

References (32)

1. Cui, Y.; Duan, X.; Huang, Y.; Lieber, C. M. In Nanowires and Nanobelts: Materials, Properties and Devices; Wang, Z. L.; Kluwer Academic/Plenum Publishers: New York, 2003; p 3.
2. Hu, J.; Odom, T. W.; Lieber, C. M. Acc. Chem. Res. 1999, 32, 435.
3. Lieber, C. M. Scientific American, September, 2001, p 58.
4. Xia, Y.; Yang, P.; Sun, Y.; Wu, Y.; Mayers, B.; Gates, B.; Yin, Y.; Kim, F.; Yan, H. Adv. Mater. 2003, 15, 353.
5. Wang, Z. L. Annu. Rev. Phys. Chem. 2004, 55, 159.
6. Alivisatos, A. P. Pure. Appl. Chem. 2000, 72, 3.
7. Alivisatos, A. P. Science 1996, 271, 933.
8. Hodes, G.; Albu-Yaron, A.; Decker, F.; Motisuke, P. Phys. Rev. B 1987, 36, 4215.
9. Ichimura, M.; Sato, N.; Nakamura, A.; Takeuchi, K.; Arai, E. Phys. Status Solidi 2002, 193, 132.
10. Murray, C. B.; Norris, D. J.; Bawendi, M. G. J. Am. Chem. Soc. 1993, 115, 8706.
11. Peng, X.; Wickham, J.; Alivisatos, A. P. J Am. Chem. Soc. 1998, 120, 5343.
12. Peng, X.; Manna, L.; Yang, W.; Wickham, J.; Scher, E.; Alivisatos, A. P. Nature 2000, 404, 59.
13. Milliron, D. J.; Hughes, S. M.; Cui, Y.; Manna, L.; Li, J.; Wang, L. W.; Alivisatos, A. P. Nature 2004, 430, 190.
14. Duan, X. F.; Lieber, C. M. Adv. Mater. 2000, 12, 298.
15. Ma, C; Wang, Z. L. Adv. Mater. 2005, 17, 1.
16. Ma, C; Ding, Y.; Moore, D.; Wang, X.; Wang, Z. L. J. Am. Chem. Soc. 2004, 126, 708.
17. Wang, G. X.; Park, M. S.; Liu, H. K.; Wexler, D.; Chen, J. Appl. Phys. Lett. 2006, 88, 1931 15-1.
18. Ridley, B. A.; Nivi, B.; Jacobson, J. M. Science 1999, 286, 746.
19. Alivisatos, P. Nat. Biotechnol. 2004, 22, 47.
20. Ouyang, M.; Awschalom, D. D. Science 2003, 301, 1074.
21. Afzaal, M.; Crouch, D.; Malik, M. A.; Motevalli, M.; O'Brien, P.; Park, J.; Woollins, J. D. Eur. J. Inorg. Chem. 2004, 2004, 171.
22. Cumberland, S. L.; Hanif, K. M.; Javier, A.; Khitrov, G. A.; Strouse, G. F.; Woessner, S. M.; Yun, C. S. Chem. Mater. 2002, 14, 1576.
23. Barrelet, C. J.; Wu, Y.; Bell, D. C; Lieber, C. M. J. Am. Chem Soc. 2003, 125, 11498.
24. Radovanovic, P. V.; Barrelet, C. J.; Gradecak, S.; Qian, F.; Lieber, C. M. Nana Lett. 2005, 5, 1407.
25. We notice that both substrate temperature and reactant vapor pressure are important for controlling CdSe nanostructures. Manipulation of vapor pressure is achieved by controlling the sublimation temperature of precursor powder. Occasionally a ceramic boat is also covered on top of both substrate and precursor powders in order to fine tune nonequilibrium reactant vapor pressure during the synthesis of CdSe nanostructures with different morphologies.
26. Nanowires with different orientations such as <1010> are occasion- ally observed but these nanowires are typically curly with a lot of defects.
27. Gudiksen, M. S.; Lieber, C. M. J. Am. Chem. Soc. 2000, 122, 8801.
28. Gudiksen, M. S.; Wang, J.; Lieber, C. M. J. Phys. Chem. 2001, 105, 4062.
29. Cui, Y.; Lauhon, L. J.; Gudiksen, M. S.; Wang, J. F.; Lieber, C. M. Appl. Phys. Lett. 2001, 78, 2214.
30. In this control experiment, position of substrate remains unchanged in order to maintain constant nucleation and growth temperature, while location of molecular precursor powder is altered to achieve local reactant pressure control in the substrate region. When precursor powder is moved closer to the substrate, there are two effects leading to higher nonequilibrium reactant vapor pressure above the substrate. One is the increase of sublimation temperature. We carefully calibrate temperatures at different locations within the furnace. Since we use single zone furnace, temperature at the position far away from the furnace center shows sensitive dependent on the distance to the center. The closer to the furnace center, the higher the local temperature can be achieved. We take advantage of this temperature distribution. Because the substrate is placed downstream of the precursor source, when the precursor powder is moved closer to the substrate it becomes also closer related to the furnace center, therefore sublimation temperature of precursor is increased, which contributes to higher local nonequilibrium reactant vapor pressure; The other effect is related to the distance itself between source and substrate. Nonequilibrium reactant vapor pressure is maximum right above the precursor source, then decays away from the source location. When the spacing between source and substrate becomes smaller, vapor pressure above the substrate is increased. Therefore by carefully controlling the spacing between precursor source and substrate, different nonequilibrium local reactant vapor pressure can be achieved above the substrate: the smaller the spacing between substrate and precursor source, the higher reactant vapor pressure above the substrate.
31. Campbell, W. B. In Whisker Technology; Levitt, A. P., Ed.; Wiley-Interscience: New York, 1970; Vol. 1, pp 5-47.
32. Cui, Y.; Banin, U.; Bjork, M.; Alivisatos, A. P. Nana Lett. 2005, 5, 1519.