Crystal growth mechanism of spherical silicon fabricated by dropping method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3577-3580

  Omae, Satoshi ^a   Minemoto, Takashi ^a   Murozono, Mikio ^b   Takakura, Hideyuki ^a   Hamakawa, Yoshihiro ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b Clean Venture 21 Co   (Japan)

Author keywords

Crystal growth; Solar cell; Spherical silicon

Indexed keywords

GRAIN SIZE AND SHAPE; SILICON; SOLAR CELLS; SOLIDIFICATION; SURFACE PROPERTIES; SURFACE ROUGHNESS;

CRYSTAL SIZES; DROPPING METHOD; SI DROPLETS; SPHERICAL SILICON;

CRYSTAL GROWTH;

EID: 33646911080     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3577     Document Type: Article

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