Enhanced photoluminescence of Tb3+ in SnO2 film by phosphorus diffusion process

Journal of Alloys and Compounds

Volumn 474, Issue 1-2, 2009, Pages 246-249

  Yuan, Zhizhong ^a,b   Li, Dongsheng ^a   Liu, Zhihong ^a   Li, Xiaoqiang ^a   Wang, Minghua ^a   Cheng, Peihong ^a   Chen, Peiliang ^a   Yang, Deren ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b JIANGSU UNIVERSITY   (China)

Author keywords

Ion implantation; Photoluminescence; SnO2; Terbium

Indexed keywords

IONS; OXIDE MINERALS; PHOSPHORUS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; TERBIUM; TITANIUM OXIDES;

AFTER HIGH TEMPERATURES; DC REACTIVE MAGNETRON SPUTTERING; INTERSTITIAL SITES; ION-IMPLANTATION; OPTICAL BAND-GAP; PHOSPHORUS DIFFUSIONS; PL INTENSITIES; POLY-CRYSTALLINE; SNO2; TB FILMS;

TERBIUM ALLOYS;

EID: 61649110723     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2008.06.054     Document Type: Article

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