Preparation of In2O3 octahedrons by heating InCl3 aqueous solution on the Si substrate

Materials Research Bulletin

Volumn 44, Issue 5, 2009, Pages 1148-1153

  Yang, Heqing ^a   Zhao, Hua ^a   Dong, Hongxing ^a   Yang, Wenyu ^a   Chen, Dichun ^b  

^a SHAANXI NORMAL UNIVERSITY   (China)

^b XI'AN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

A. Oxides; A. Semiconductors; B. Crystal growth; C. Electron microscopy; D. Luminescence

Indexed keywords

CRYSTAL GROWTH; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; HEATING; INDIUM; LEAKAGE (FLUID); LUMINESCENCE; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; VACANCIES;

A. OXIDES; A. SEMICONDUCTORS; B. CRYSTAL GROWTH; C. ELECTRON MICROSCOPY; D. LUMINESCENCE;

OXYGEN VACANCIES;

EID: 61549137185     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2008.09.033     Document Type: Article

References (31)

1. Granqvist C.G. Appl. Phys. A: Solids Surf. 57 (1993) 19
2. Hamburg I., and Granqvist C.G. J. Appl. Phys. 60 (1986) R123
3. Takada T., Suzukik K., and Nakane M. Sens. Actuators B 13 (1993) 404
4. Lee M.-S., Choi W.C., Kim E.K., Kim C.K., and Min S.-K. Thin Solids Films 279 (1996) 1
5. Pan Z.W., Dai Z.R., and Wang Z.L. Science 291 (2001) 1947
6. Nguyen P., Ng H.T., Yamada T., Smith M.K., Li J., Han J., and Meyyappan M. Nano Lett. 4 (2004) 651
7. Zeng F.H., Zhang X., Wang J., Wang L.S., and Zhang L.N. Nanotechnology 15 (2004) 596
8. Lao J.Y., Huang J.Y., Wang D.Z., and Ren Z.F. Adv. Mater. 16 (2004) 65
9. Li C., Zhang D.H., Han S., Liu X.L., Tang T., and Zhou C.W. Adv. Mater. 15 (2003) 143
10. Li C., Zhang D.H., Liu X.L., Han S., Tang T., Han J., and Zhou C.W. Appl. Phys. Lett. 82 (2003) 1613
11. Curreli M., Li C., Sun Y.H., Lei B., Gundersen M.A., Thompson M.E., and Zhou C.W. J. Am. Chem. Soc. 127 (2005) 6922
12. Liang C.H., Meng G.W., Lei Y., Phillipp F., and Zhang L.D. Adv. Mater. 13 (2001) 1330
13. Yu D.B., Yu S.-H., Zhang S.Y., Zuo J., Wang D.B., and Qian Y.T. Adv. Funct. Mater. 13 (2003) 497
14. Li Y.B., Bando Y., and Golberg D. Adv. Mater. 15 (2003) 581
15. Fang Y.P., Wen X.G., and Yang S.H. Angew. Chem. Int. Ed. 45 (2006) 4655
16. Jeong J.S., Lee J.Y., Lee C.J., An S.J., and Yi G.-C. Chem. Phys. Lett. 384 (2004) 246
17. Jia H.B., Zhang Y., Chen X.H., Shu J., Luo X.H., Zhang Z.S., and Yu D.P. Appl. Phys. Lett. 82 (2003) 4146
18. Guha P., Kar S., and Chaudhuri S. Appl. Phys. Lett. 85 (2004) 3851
19. Hao Y.F., Meng G.W., Ye C.H., and Zhang L.D. Cryst. Growth Des. 5 (2005) 1617
20. Lorenz H., Stolger-Pollach M., Schwarz S., Pfaller K., Klötzer B., Bernardi J., and Penner S. J. Phys. Chem. C 112 (2008) 918
21. Gurlo A., Barsan N., Weimar U., Ivanovskaya M., Taurino A., and Siciliano P. Chem. Mater. 15 (2003) 4377
22. Lee C.H., Kim M., Kim T., Kim A., Paek J., Lee J.W., Choi S.-Y., Kim K., Park J.-B., and Lee K. J. Am. Chem. Soc. 128 (2006) 9326
23. Zhuang Z.B., Peng Q., Liu J.F., Wang X., and Li Y.D. Ingor. Chem. 46 (2007) 5179
24. Seo W.S., Jo H.H., Lee K., and Park J.T. Adv. Mater. 15 (2003) 795
25. Liu Q.S., Lu W.G., Ma A.H., Tang J.K., Lin J., and Fang J.Y. J. Am. Chem. Soc. 127 (2005) 5276
26. Narayanaswamy A., Xu H.F., Pradhan N., Kim M., and Peng X.G. J. Am. Chem. Soc. 128 (2006) 10310
27. Krunks M., Kijatkina O., Rebane H., Oja I., Mikli V., and Mere A. Thin Solid Films 71 (2002) 403
28. Chamberland B., and Babcock K. Mater. Res. Bull. 2 (1967) 481
29. Wang Z.L. J. Phys. Chem. B 104 (2000) 1153
30. Casula M.F., Jun Y.-W., Zaziski D.J., Chan E.M., Corrias A., and Alivisatos A.P. J. Am. Chem. Soc. 128 (2006) 1675
31. Ohhata Y., Shinoki F., and Yoshida S. Thin Solid Films 59 (1979) 255