Diode effect in asymmetric double-tunnel barriers with single-metal nanoclusters

Applied Physics Letters

Volumn 88, Issue 16, 2006, Pages

  Iovan, A ^a   Haviland, D B ^a   Korenivski, V ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRIC RECTIFIERS; ELECTRODES; ELECTRON TUNNELING; SEMICONDUCTOR QUANTUM DOTS;

CHARGING EFFECTS; DOUBLE-BARRIER STRUCTURES; METAL CLUSTERS; QUANTIZED ENERGY;

NANOSTRUCTURED MATERIALS;

EID: 33646198831     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2195643     Document Type: Article

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