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Volumn 68, Issue 20, 2003, Pages

Disorder effects in diluted ferromagnetic semiconductors

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; CALCULATION; DENSITY; ELECTRON TRANSPORT; MAGNETISM; MOLECULAR DYNAMICS; MOLECULAR PHYSICS; SEMICONDUCTOR; TEMPERATURE DEPENDENCE;

EID: 0346154839     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.205311     Document Type: Article
Times cited : (24)

References (25)
  • 20
    • 85038983530 scopus 로고    scopus 로고
    • In the case of S = 1/2, this corresponds to a singlet state (Formula presented) with degeneracy 1 and a triplet state (Formula presented) with degeneracy 3
    • In the case of S = 1/2, this corresponds to a singlet state (Formula presented) with degeneracy 1 and a triplet state (Formula presented) with degeneracy 3.
  • 23
    • 85038977567 scopus 로고    scopus 로고
    • In GaAs the unit cell volume is (Formula presented). For simplicity, our calculations are performed on a simple cubic lattice, thus the lattice spacing we take is (Formula presented)
    • In GaAs the unit cell volume is (Formula presented). For simplicity, our calculations are performed on a simple cubic lattice, thus the lattice spacing we take is (Formula presented).
  • 24
    • 85038982816 scopus 로고    scopus 로고
    • h of the order of 0.3–0.4 leads to a value of J weakly affected (only within 10%)
    • h of the order of 0.3–0.4 leads to a value of J weakly affected (only within 10%).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.