Efficient and long-lived green light-emitting diodes based on ZnSSe:Te active layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 3 A, 2002, Pages 1359-1364

  Lee, Hong Chan ^a   Abe, Tomoki ^a   Kaneko, Nobumasa ^a   Adachi, Masahiro ^a   Watanabe, Masashi ^a   Fujita, Yusuke ^a   Kasada, Hirofumi ^a   Ando, Koshi ^a  

^a TOTTORI UNIVERSITY   (Japan)

Author keywords

Green light emitting diode; Molecular beam epitaxy; Slow mode degradation; Te cluster emission; ZnSSe:Te

Indexed keywords

DEGRADATION; DOPING (ADDITIVES); EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; ZINC COMPOUNDS;

SLOW-MODE DEGRADATION;

LIGHT EMITTING DIODES;

EID: 0036509048     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1359     Document Type: Article

References (14)