On the optical properties of amorphous Ge-Ga-Se-KBr films prepared by pulsed laser deposition

Applied Surface Science

Volumn 255, Issue 11, 2009, Pages 5952-5956

  Pan, R K ^a,b   Tao, H Z ^a   Lin, C G ^a   Zang, H C ^a   Zhao, X J ^a   Zhang, T J ^b  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

^b HUBEI UNIVERSITY   (China)

Author keywords

Annealing; Ge Ga Se KBr films; Optical properties; Pulsed laser deposition

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SEMICONDUCTORS; ANNEALING; ENERGY GAP; FILM PREPARATION; GLASS TRANSITION; LIGHT TRANSMISSION; OPTICAL PROPERTIES; POTASSIUM COMPOUNDS; PULSED LASER DEPOSITION; PULSED LASERS; REFRACTION; REFRACTIVE INDEX; SEMICONDUCTOR LASERS; THIN FILMS;

AMORPHOUS THIN FILMS; AS-DEPOSITED FILMS; INDEX OF REFRACTION; OPTICAL PARAMETER; OPTICAL TRANSMISSION SPECTRUM; SPECTRA ANALYSIS; THERMAL BLEACHING; THERMAL CONTRACTION;

OPTICAL FILMS;

EID: 60949108825     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.01.042     Document Type: Article

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