메뉴 건너뛰기




Volumn , Issue , 2008, Pages 962-965

Electrical properties of multilayer silicon nano-crystal nonvolatile memory

Author keywords

[No Author keywords available]

Indexed keywords

CMOS TECHNOLOGIES; ELECTRICAL PROPERTIES; GATE VOLTAGES; MEMORY WINDOWS; MULTI LAYERS; NANOCRYSTAL NONVOLATILE MEMORIES; NON-VOLATILE MEMORIES; PROGRAM AND ERASE; RELIABILITY PERFORMANCE; SILICON NANOCRYSTALS; TRANSIENT CHARACTERISTICS;

EID: 60649119212     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2008.4734703     Document Type: Conference Paper
Times cited : (1)

References (13)
  • 3
    • 60649088751 scopus 로고    scopus 로고
    • S. Tiwari, F. Rana, K. Chan, L. Shi, and H. Hanafi, Appl. Phys. Lett. 69, pl232(1996).
    • S. Tiwari, F. Rana, K. Chan, L. Shi, and H. Hanafi, Appl. Phys. Lett. 69, pl232(1996).
  • 7
    • 60649103467 scopus 로고    scopus 로고
    • www.physorg.com/news 8524.html
  • 8
    • 60649112335 scopus 로고    scopus 로고
    • T.K. Li and S.T. Hsu, C3.13, ICSICT (2006).
    • T.K. Li and S.T. Hsu, C3.13, ICSICT (2006).
  • 10
    • 33847725490 scopus 로고    scopus 로고
    • Won Jong Yoo 1, Electron Devices Meeting, 2005
    • IEEE International, 5-7 Dec
    • S. K. Samanta, P. K. Singh, Won Jong Yoo 1, Electron Devices Meeting, 2005. IEDM Technical Digest, IEEE International, 5-7 Dec. 2005 p170 - 173
    • (2005) IEDM Technical Digest , pp. 170-173
    • Samanta, S.K.1    Singh, P.K.2
  • 12
    • 60649116163 scopus 로고    scopus 로고
    • T. Lu, J. Shen, B. Mereu, Appl. Phys. A 00, (2004).
    • T. Lu, J. Shen, B. Mereu, Appl. Phys. A 00, (2004).
  • 13
    • 34547356476 scopus 로고    scopus 로고
    • L.D. Wang, Z.G Zhang, Y. Zeng, Y. Zhao, X. Zhang, L.Y Pan, and J. Zhu, ICSICT, II, p827 (2006)
    • L.D. Wang, Z.G Zhang, Y. Zeng, Y. Zhao, X. Zhang, L.Y Pan, and J. Zhu, ICSICT, Volume II, p827 (2006)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.