Performance and reliability feature of nanocrystal memory devices

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2006, Pages 827-829

  Wang, Liudi ^a   Zhang, Zhigang ^a   Zeng, Ying ^a   Zhao, Yue ^a   Zhang, Xiang ^a   Pan, Liyang ^a   Zhu, Jun ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATE DIELECTRICS; NANOCRYSTALS; RELIABILITY; SILICON; THRESHOLD VOLTAGE;

CHARGE-LOSS; ERASING TIME; STRESS INDUCED LEAKAGE CURRENT (SILC);

MOSFET DEVICES;

EID: 34547356476     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2006.306520     Document Type: Conference Paper

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5. C. M. Compagnoni, D. Ielmini, A. S. Spinelli, A. L. Lacaita, C. Previtali, C. Gerardi, IEEE International, pp. 506-512, (2003).