The substrate thickness dependence of the photovoltage in LaAlO 3-δ /Si heterostructures

Applied Physics Letters

Volumn 94, Issue 6, 2009, Pages

  Wen, Juan ^a   Jin, Kui Juan ^a   He, Meng ^a   Lu, Huibin ^a   Yang, Fang ^a   Yang, Guozhen ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER CONTROL SYSTEMS; CRYSTAL GROWTH; CRYSTALS; HETEROJUNCTIONS; LANTHANUM ALLOYS; OXIDE MINERALS; PEROVSKITE; PHOTOELECTRICITY; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

DIFFERENT SUBSTRATES; EPITAXIALLY GROWN; FAST RESPONSE; HETEROSTRUCTURES; HIGH SENSITIVITIES; LASER MOLECULAR-BEAM EPITAXIES; P-TYPE SI; PEROVSKITE OXIDES; PHOTO VOLTAGES; PHOTOELECTRIC PROPERTIES; PHOTOELECTRIC RESPONSE; PICOSECOND; SI SUBSTRATES; SUBSTRATE THICKNESS; THIN SILICON SUBSTRATES;

SUBSTRATES;

EID: 60349126499     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3081400     Document Type: Article

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