Electronic structure of cubic ErxGa1-xN using the LSDA+U approach

Physica B: Condensed Matter

Volumn 403, Issue 17, 2008, Pages 2702-2706

  Lazreg, A ^a   Dridi, Z ^a   Benkabou, F ^b   Bouhafs, B ^a  

^a UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^b UNIVERSITÉ DE MONCTON   (Canada)

Author keywords

GaN; LSDA+U; Rare earth

Indexed keywords

CONDUCTION BANDS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ERBIUM; GALLIUM ALLOYS; GALLIUM NITRIDE; HEAT CONDUCTION; HETEROJUNCTIONS; PROGRAMMING THEORY; RARE EARTH ELEMENTS; SEMICONDUCTING GALLIUM; SUGAR (SUCROSE);

4F STATE; CONDUCTION BAND EDGES; DENSITY-FUNCTIONAL THEORY CALCULATIONS; ELECTRONIC STRUCTURE CALCULATIONS; GAN; HUBBARD; LOCAL SPINS; LSDA+U; RARE-EARTH; RARE-EARTH IMPURITIES;

DENSITY FUNCTIONAL THEORY;

EID: 60249101437     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2008.02.003     Document Type: Article

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