Two-probe electrical measurements in transmission electron microscopes-behavioral control of tungsten microwires

Microscopy Research and Technique

Volumn 72, Issue 2, 2009, Pages 93-100

  Costa, Pedro M F J ^a,b   Fang, Xiaosheng ^a   Wang, Shiliang ^c   He, Yuehui ^c   Bando, Yoshio ^a   Mitome, Masanori ^a   Zou, Jin ^d   Huang, Han ^d   Golberg, Dmitri ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF AVEIRO   (Portugal)

^c CENTRAL SOUTH UNIVERSITY   (China)

^d UNIVERSITY OF QUEENSLAND   (Australia)

Author keywords

Electrical contacts; I V; TEM; Tungsten

Indexed keywords

BINARY ALLOYS; CURRENT VOLTAGE CHARACTERISTICS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN ALLOYS;

AU ELECTRODES; BEHAVIORAL CONTROL; CURRENT-VOLTAGE CHARACTERISTICS; ELECTRICAL CONTACTS; ELECTRICAL MEASUREMENT; I-V; LOADING FORCE; MICROWIRE; TEM; TRANSMISSION ELECTRON;

TUNGSTEN;

GOLD; NANOWIRE; TUNGSTEN;

ARTICLE; ELECTRIC CURRENT; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; IMAGE ANALYSIS; PRIORITY JOURNAL; TRANSMISSION ELECTRON MICROSCOPY;

EID: 59949083742     PISSN: 1059910X     EISSN: 10970029     Source Type: Journal    
DOI: 10.1002/jemt.20648     Document Type: Article

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