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Volumn 79, Issue 4, 2009, Pages

Giant frictional drag in strongly interacting bilayers near filling factor one

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EID: 59749101193     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.041303     Document Type: Article
Times cited : (14)

References (28)
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    • Hole systems grown on GaAs (311)A substrates exhibit a mobility anisotropy, with the mobility being lower along the [01 1̄] direction.
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  • 17
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    • The tunneling energy, i.e. the symmetric-antisymmetric splitting, deduced from interlayer tunneling measurements is 90 μK for the bilayer system studied here [10.1103/PhysRevB.77.161301
    • The tunneling energy, i.e. the symmetric-antisymmetric splitting, deduced from interlayer tunneling measurements is 90 μK for the bilayer system studied here [S. Misra, N. C. Bishop, E. Tutuc, and M. Shayegan, Phys. Rev. B 77, 161301 (R) (2008)]. 10.1103/PhysRevB.77.161301
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    • Coleridge, P.T.1
  • 20
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    • We note that because the bilayer enters a deep insulating phase for ν<1, the interlayer leakage prevents accurate drag resistivity measurements on right flank of ν=1.
    • We note that because the bilayer enters a deep insulating phase for ν<1, the interlayer leakage prevents accurate drag resistivity measurements on right flank of ν=1.
  • 23
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    • While we took precautions to use sufficiently low currents to avoid carrier Joule heating, we cannot rule out a lack of full carrier thermalization at the lowest temperatures.
    • While we took precautions to use sufficiently low currents to avoid carrier Joule heating, we cannot rule out a lack of full carrier thermalization at the lowest temperatures.
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