Effect of rearranging sp2/sp3 hybridized-bonding on the field emission characteristics of nano-crystalline diamond films

Diamond and Related Materials

Volumn 18, Issue 2-3, 2009, Pages 200-205

  LeQuan, X C ^a   Kang, W P ^a   Davidson, J L ^a   Choi, B K ^a   Wong, Y M ^a   Barbosa, R ^b   Lu, W ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b FISK UNIVERSITY   (United States)

Author keywords

Binding energy; Field emission; Graphite; Nanodiamond; Nitrogen; XPS

Indexed keywords

ATOMS; BINDING ENERGY; BINDING SITES; CARBON FILMS; CARBON NANOTUBES; CHEMICAL BONDS; CONDUCTIVE FILMS; CRYSTALLINE MATERIALS; DIAMONDS; FIELD EMISSION; FILM GROWTH; GRAIN GROWTH; GRAPHITE; GROWTH (MATERIALS); MICROWAVES; NANOCRYSTALLINE MATERIALS; NITROGEN; NUCLEAR ENERGY; PLASMA DEPOSITION; POTENTIAL ENERGY; X RAY PHOTOELECTRON SPECTROSCOPY;

CARBON CONCENTRATIONS; CHEMICAL BONDINGS; CONDUCTIVE SILICONS; EFFECTIVE WORK FUNCTIONS; ELECTRON FIELD EMISSION PROPERTIES; ELECTRON FIELD EMISSIONS; FIELD ENHANCEMENT FACTORS; FIELD-EMISSION CHARACTERISTICS; FOWLER-NORDHEIM; GRAIN STRUCTURES; GROWTH CONDITIONS; LOW-POWER; MICROWAVE-PLASMA CHEMICAL VAPOR DEPOSITIONS; NANO-CRYSTALLINE; NANODIAMOND; NITROGEN INCORPORATIONS; PRECURSOR GAS; THIN-FILM; TURN-ON FIELDS; XPS;

DIAMOND FILMS;

EID: 59649108781     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.11.017     Document Type: Article

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