Recovery of negative electron affinity by annealing on (111) oxidized diamond surfaces

Diamond and Related Materials

Volumn 18, Issue 2-3, 2009, Pages 206-209

  Takeuchi, D ^a   Ri, S G ^a   Tokuda, N ^a   Yamasaki, S ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

(111); Negative electron affinity; Oxidation; Photoemission yield spectroscopy

Indexed keywords

AMORPHOUS FILMS; ANNEALING; BORON; CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; DIAMONDS; ELECTRONIC PROPERTIES; ELECTRONS; EMISSION SPECTROSCOPY; HYDROGEN; OXIDATION; PHOTOELECTRICITY; PHOTOEMISSION; PLASMONS; SURFACE PROPERTIES; VACUUM DEPOSITION;

(111); BORON-DOPED; CHEMICAL VAPORS; CVD-DIAMONDS; HOMOEPITAXIAL; HOMOEPITAXIAL DIAMOND FILMS; HYDROGEN TERMINATIONS; IN VACUUMS; NEGATIVE ELECTRON AFFINITY; OXIDIZED DIAMOND SURFACES; P TYPES; PHOTOEMISSION YIELD SPECTROSCOPY; POSITIVE ELECTRON AFFINITIES; SURFACE ELECTRONIC PROPERTIES; XPS;

ELECTRON AFFINITY;

EID: 59649097211     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.10.007     Document Type: Article

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