Surface electronic properties on boron doped (111) CVD homoepitaxial diamond films after oxidation treatments

Diamond and Related Materials

Volumn 16, Issue 4-7 SPEC. ISS., 2007, Pages 831-835

  Ri, Sung Gi ^a,b   Takeuchi, Daisuke ^a,b   Nebel, Christoph E ^a   Tokuda, Norio ^a,b   Yamazaki, Yuichi ^a,c   Yamasaki, Satoshi ^a,b,c   Okushi, Hideyo ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

(111) diamond surface; Adsorbates; Annealing effects; Oxidation treatments; Surface electronic properties; Surface states

Indexed keywords

ANNEALING; BORON; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; HALL EFFECT; OXIDATION; SEMICONDUCTOR DOPING;

(111) DIAMOND SURFACE; ANNEALING EFFECTS; OXIDATION TREATMENTS; SURFACE ELECTRONIC PROPERTIES; SURFACE STATES;

DIAMOND FILMS;

EID: 34047260563     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2007.01.018     Document Type: Article

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