SCOPUS 정보 검색 플랫폼

Diamond and Related Materials

Volumn 18, Issue 2-3, 2009, Pages 169-172

Growth and electron field emission properties of ultrananocrystalline diamond on silicon nanostructures

(6) Joseph, P T a Tai, N H a Cheng, Y F a Lee, C Y a Cheng, H F b Lin, I N c

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b NATIONAL TAIWAN NORMAL UNIVERSITY (Taiwan)

c TAMKANG UNIVERSITY (Taiwan)

Author keywords

Electron field emission; SiNS; UNCD

Indexed keywords

CURRENT DENSITY; DIAMONDS; ELECTRONS; FIELD EMISSION; GROWTH (MATERIALS); NANOCRYSTALLINE MATERIALS; NANORODS; NANOSTRUCTURES;

APPLIED FIELDS; ELECTRON FIELD EMISSION; ELECTRON FIELD EMISSION PROPERTIES; GROWTH CONDITIONS; SI NANOSTRUCTURES; SI NANOWIRES; SILICON NANOSTRUCTURES; SINS; TURN-ON FIELDS; ULTRA-NANO-CRYSTALLINE DIAMONDS; UNCD;

SILICON;

EID: 59649091863 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/j.diamond.2008.10.020 Document Type: Article

Times cited : (5)

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