Dislocation density and band structure effects on spin dynamics in GaN

Journal of Applied Physics

Volumn 105, Issue 2, 2009, Pages

  Brimont, Christelle ^a   Gallart, Mathieu ^a   Gadalla, Atef ^a   Cŕgut, Olivier ^a   Hönerlage, Bernd ^a   Gilliot, Pierre ^a  

^a INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CORUNDUM; EPITAXIAL LAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; POLARIZATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SINGLE CRYSTALS; SUPERCONDUCTING FILMS; ZINC SULFIDE;

BAND STRUCTURE EFFECTS; DIFFERENTIAL REFLECTIVITIES; DISLOCATION DENSITIES; ELLIOTT-YAFET MECHANISMS; EXCITONIC TRANSITIONS; GAN LAYERS; HIGH DISLOCATION DENSITIES; HOLE BANDS; HOLE-SPIN RELAXATIONS; POLARIZATION RATES; RESIDUAL STRAINS; SIC SUBSTRATES; SPIN RELAXATIONS; SPIN-RELAXATION RATES; TEMPERATURE DEPENDENCES; VALENCE-BAND STRUCTURES; WURTZITE;

SPIN DYNAMICS;

EID: 59349113599     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3056657     Document Type: Article

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