Optical properties of p -GaSe single crystals doped with Te

Journal of Applied Physics

Volumn 105, Issue 2, 2009, Pages

  Evtodiev, I ^a   Leontie, L ^b   Caraman, M ^c   Stamate, M ^c   Arama, E ^d  

^a MOLDOVA STATE UNIVERSITY   (Moldova)

^b ALEXANDRU IOAN CUZA UNIVERSITY OF IASI   (Romania)

^c VASILE ALECSANDRI UNIVERSITY OF BACAU   (Romania)

^d STATE UNIVERSITY OF MEDICINE AND PHARMACY NICOLAE TESTEMITANU   (Moldova)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL ATOMIC STRUCTURE; CRYSTAL IMPURITIES; LAYERED SEMICONDUCTORS; LIGHT ABSORPTION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SELENIUM COMPOUNDS; SINGLE CRYSTALS; TELLURIUM;

EXCITONIC ABSORPTION; FUNDAMENTAL ABSORPTION EDGE; GASE CRYSTALS; IMPURITY STATE; LOW CONCENTRATIONS; PHOTOLUMINESCENCE BANDS; STRUCTURAL DEFECT; THERMAL QUENCHING;

GALLIUM COMPOUNDS;

EID: 59349112746     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3068464     Document Type: Article

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