Study of generation-recombination processes of non-equilibrium charge carriers in single crystalline thin GaSe(Cu) films

Journal of Optoelectronics and Advanced Materials

Volumn 8, Issue 1, 2006, Pages 112-118

  Cuculescu, E ^a   Evtodiev, Ig ^a   Caraman, M ^b   Leontie, L ^c  

^a Kishinev State University   (Moldova)

^b VASILE ALECSANDRI UNIVERSITY OF BACAU   (Romania)

^c ALEXANDRU IOAN CUZA UNIVERSITY OF IASI   (Romania)

Author keywords

GaSe(Cu); Photoconduction; Photoluminescence; Thin films

Indexed keywords

ACTIVATION ENERGY; CARRIER MOBILITY; COPPER; CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY; LAYERED SEMICONDUCTORS; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; SELENIUM COMPOUNDS; SEMICONDUCTOR DOPING; TEMPERATURE DISTRIBUTION; THIN FILMS;

ELECTRICAL CONDUCTIVITY; GASE(CU); GENERATION-RECOMBINATION PROCESS; IMPURITY ABSORPTION; ORDERS OF MAGNITUDE; PHOTOCONDUCTION; SINGLE-CRYSTALLINE; TEMPERATURE DEPENDENCE;

GALLIUM COMPOUNDS;

EID: 33645962224     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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