Photoelectrical properties of layered GaS single crystals and related structures

Materials Research Bulletin

Volumn 43, Issue 12, 2008, Pages 3195-3201

  Caraman, M ^a   Chiricenco, V ^b   Leontie, L ^c   Rusu, I I ^a  

^a VASILE ALECSANDRI UNIVERSITY OF BACAU   (Romania)

^b MOLDOVA STATE UNIVERSITY   (Moldova)

^c ALEXANDRU IOAN CUZA UNIVERSITY OF IASI   (Romania)

Author keywords

A. Layered compounds; A. Semiconductors; B. Crystal growth; D. Electrical properties

Indexed keywords

ACTIVATION ENERGY; COPPER COMPOUNDS; GALLIUM COMPOUNDS; GASES; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; NICKEL COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; VANADIUM COMPOUNDS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

ACCEPTOR LEVELS; CU-DOPED; GALLIUM MONOSULFIDE; LAYERED COMPOUND; PHOTO-ELECTRICAL PROPERTIES; WAVELENGTH RANGES; ZNO STRUCTURES;

SULFUR COMPOUNDS;

EID: 54049139570     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2008.04.014     Document Type: Article

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