Chemical passivity of III-VI bilayer terminated Si(111)

Applied Physics Letters

Volumn 87, Issue 17, 2005, Pages 1-3

  Adams, Jonathan A ^a,c   Bostwick, Aaron A ^a,d   Ohuchi, Fumio S ^b   Olmstead, Marjorie A ^a  

^a UNIVERSITY OF WASHINGTON   (United States)

^b University of Washington   (United States)

^c Advanced Portfolio Technologies Ltd   (United Kingdom)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC STRUCTURES; BILAYERS; CHEMICAL PASSIVITY;

ELECTRONIC STRUCTURE; ENERGY GAP; PHOTOELECTRON SPECTROSCOPY;

SILICON;

EID: 28344447323     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2112200     Document Type: Article

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