Room-temperature absorption edge of InGaN/GaN quantum wells characterized by photoacoustic measurement

Japanese Journal of Applied Physics

Volumn 47, Issue 12, 2008, Pages 8805-8807

  Takeda, Yosuke ^a   Takagi, Daigo ^a   Sano, Tatsuji ^a   Tabata, Shin ^a   Kobayashi, Naoki ^a   Shen, Qing ^a   Toyoda, Taro ^a   Yamamoto, Jun ^b   Ban, Yuzaburo ^b   Matsumoto, Kou ^b  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^b TAIYO NIPPON SANSO CORPORATION   (Japan)

Author keywords

Absorption edge; InGaN GaN QWs; Photoacoustic measurement; Piezoelectric effect; Skokes shift at room temperature

Indexed keywords

ELECTRON TRANSITIONS; GALLIUM ALLOYS; GALLIUM NITRIDE; PHOTOACOUSTIC EFFECT; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; WELLS;

ABSORPTION EDGE; INGAN/GAN QWS; PHOTOACOUSTIC MEASUREMENT; PIEZOELECTRIC EFFECT; SKOKES SHIFT AT ROOM TEMPERATURE;

ABSORPTION;

EID: 59349090645     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.8805     Document Type: Article

References (16)

1. K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tunekawa, Y. Imada, M. Kato, and T. Taguchi: Jpn. J. Appl. Phys. 40 (2001) L583.
2. K. Osamura, S. Naka, and Y. Murakami: J. Appl. Phys. 46 (1975) 3432.
3. I. H. Ho and G. B. Stringfellow: Appl. Phys. Lett. 69 (1996) 2701.
4. T. Matsuoka: Appl. Phys. Lett. 71 (1997) 105.
5. F. A. Ponce, S. Srinivasan, A. Bell, L. Geng, R. Liu, M. Stevens, J. Cai, H. Omiya, H. Marui, and S. Tanaka: Phys. Status Solidi B 240 (2003) 273.
6. A. Rosencwaig and A. Gersho: J. Appl. Phys. 47 (1976) 64.
7. L. J. Digna, M. Murakami, A. Sato, Y. Kumagai, T. Ishihara, N. Kobayashi, Q. Shen, and T. Toyoda: Jpn. J. Appl. Phys. 45 (2006) 5563.
8. F. Urbach: Phys. Rev. 92 (1953) 1324.
9. R. J. Elliott: Phys. Rev. 108 (1957) 1384.
10. M. Kurouchi, T. Araki, H. Naoi, T. Yamaguchi, A. Suzuki, and Y. Nanishi: Phys. Status Solidi B 241 (2004) 2843.
11. S. F. Chichibu, T. Sota, K. Wada, O. Brandt, K. H. Ploog, S. P. DenBaars, and S. Nakamura: Phys. Status Solidi A 183 (2001) 91.
12. X. H. Zhang, W. Liu, and S. J. Chua: J. Cryst. Growth 268 (2004) 521.
13. Y. H. Huang, C. L. Cheng, T. T. Chen, and Y. F. Chen: J. Appl. Phys. 101 (2007) 103521.
14. I. Vurgaftman and J. R. Meyer: J. Appl. Phys. 94 (2003) 3675.
15. F. Bernardini, V. Fiorentini, and D. Vanderbilt: Phys. Rev. Lett. 79 (1997) 3958.
16. S. K. Pugh, D. J. Dugdale, S. Brand, and R. A. Abram: Semicond. Sci. Technol. 14 (1999) 23.