Thickness dependent loss function of Si with 0.14 eV energy resolution

Advanced Engineering Materials

Volumn 6, Issue 10, 2004, Pages 826-828

  Stöger Pollach, Michael ^a   Hebert, Cécile ^a   Zandbergen, Henny W ^b   Schattschneider, Peter ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; DIELECTRIC PROPERTIES; ELECTRON BEAMS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SOURCES; ENERGY GAP; EPITAXIAL GROWTH; KINEMATICS; TRANSMISSION ELECTRON MICROSCOPY;

DIELECTRIC RESPONSE FUNCTION; QUANTUM SIZE EFFECT; SURFACE PLASMONS; ZERO LOSS PEAK (ZLP);

SILICON WAFERS;

EID: 18744401975     PISSN: 14381656     EISSN: None     Source Type: Journal    
DOI: 10.1002/adem.200400085     Document Type: Article

References (13)

1. I. Alexandrou, A. Papworth, G. Amaratunga, C. Liely, L. M. Brown in Microscopy of Semiconducting Materials XIII, 31 March - 3 April 2004.
2. M. Stöger-Pollach, C. Hébert, P. Schattschneider, S. Rubino, H. W. Zandbergen, J. Phys.: Cond. Mat. 2004 submitted.
3. M. Stöger-Pollach, P. Schattschneider, Phys. Rev. Lett. 2004 submitted.
4. R. F. Egerton, Electron energy-Loss Spectroscopy in the Electron Microscope, 2nd ed., Plenum Press NY 1996, p. 151.
5. P. Schattschneider, Fundamentals of inelastic electron scattering, Springer Verlag, 1986, p. 67.
6. http://www.wien2k.at.
7. R. H. Ritchie, Phys. Rev. 1957, 106, 874.
8. P. E. Batson, Ultramicroscopy 1993, 50, 1.
9. H. Toir, P. Roca i Cabarrocas, Phsy. Rev. B 2002, 65, 155330.
10. H. Kobayishi, Y. Yamamashita, T. Mori, Y. Nakato, T. Komeda, Y. Nishioka, Jpn. J. Appl. Phys 1995, 34, 959.
11. B. Rafferty, L. M. Brown, Phys. Rev. B 1998, 58, 10326.
12. J. Bruley, L. M. Brown, S. D. Berger, IoP conference series 1985, 78, 561.
13. th Pfefferkorn Conf., Scanning Microscopy Supplement 1, 1987, 551.