Microstructural characterization of porous silicon for use in optoelectronic devices

EPJ Applied Physics

Volumn 45, Issue 1, 2009, Pages

  Abidi, D ^a,b   Romdhane, S ^a,c   Brunet Bruneau, A ^b   Fave, J L ^b  

^a FACULTÉ DES SCIENCES DE TUNIS   (Tunisia)

^b INSTITUT DES NANOSCIENCES DE PARIS   (France)

^c Struggle and Prevention   (Tunisia)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOCRYSTALLINE SILICON; NANOCRYSTALS; OPTOELECTRONIC DEVICES; RAMAN SCATTERING; SILICON WAFERS; SPECTROSCOPIC ELLIPSOMETRY; TRANSMISSION ELECTRON MICROSCOPY;

EXTINCTION COEFFICIENTS; MICRO-STRUCTURAL CHARACTERIZATION; MID-INFRARED SPECTRAL RANGE; PHONON CONFINEMENT MODEL; PHOTOLUMINESCENCE INTENSITIES; RAMAN SCATTERING MEASUREMENTS; RANDOMLY DISTRIBUTED; SI NANO-CRYSTALLITES;

POROUS SILICON;

EID: 59049104713     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap:2008192     Document Type: Article

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