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Microelectronics Journal

Volumn 40, Issue 2, 2009, Pages 328-330

Exciton spin dynamics in zinc-blende GaN/AlN quantum dots: Temperature dependence

(8) Lagarde, D a Balocchi, A a Carrere H a Renucci, P a Amand, T a Founta, S b Mariette, H b Marie, X a

a UNIVERSITÉ DE TOULOUSE (France)

b CEA GRENOBLE (France)

Author keywords

Quantum dots; Spin; Wide band gap semiconductors

Indexed keywords

CRYSTALS; ELECTRIC CONDUCTIVITY; EXCITONS; QUANTUM ELECTRONICS; RADIATION DAMAGE; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM DOTS; ZINC;

EXCITON SPIN DYNAMICS; GAN/ALN QUANTUM DOTS; LINEAR POLARIZATIONS; PICOSECOND TIME; QUANTUM DOTS; SELF-ORGANIZED; SPIN; SPIN ALIGNMENTS; TEMPERATURE DEPENDENCES; WIDE BAND-GAP SEMICONDUCTORS; ZINC BLENDES;

SPIN DYNAMICS;

EID: 59049104452 PISSN: 00262692 EISSN: None Source Type: Journal
DOI: 10.1016/j.mejo.2008.07.020 Document Type: Article

Times cited : (2)

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