CuGaSe2 solar cells using atomic layer deposited Zn(O,S) and (Zn,Mg)O buffer layers

Thin Solid Films

Volumn 517, Issue 7, 2009, Pages 2305-2308

  Hultqvist, A ^a   Platzer Bjorkman C ^a   Pettersson, J ^a   Torndahl T ^a   Edoff, M ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

(Zn,Mg)O; ALD; Buffer layer; CuGaSe2; Solar cells; Zn(O,S)

Indexed keywords

ATOMIC PHYSICS; BUFFER LAYERS; CADMIUM COMPOUNDS; CONVERSION EFFICIENCY; ELECTRIC CONDUCTIVITY; ELECTRODEPOSITION; ELECTRON MOBILITY; EPITAXIAL LAYERS; GALLIUM; OPTICAL WAVEGUIDES; PHOTOVOLTAIC CELLS; SEMICONDUCTING CADMIUM COMPOUNDS; SOLAR CELLS; SOLAR EQUIPMENT;

(ZN,MG)O; ALD; BUFFER LAYER; CUGASE2; ZN(O,S);

ZINC;

EID: 58949093588     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.10.109     Document Type: Article

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