Deposition and characterization of highly p-type antimony doped ZnTe thin films

Thin Solid Films

Volumn 517, Issue 7, 2009, Pages 2149-2152

  Barati, A ^a   Klein, A ^a   Jaegermann, W ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Doping; P type; Sb; Thin films; ZnTe

Indexed keywords

ANTIMONY; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; GALVANOMAGNETIC EFFECTS; HALL EFFECT; MAGNETIC FIELD EFFECTS; SEMICONDUCTING ZINC COMPOUNDS; SURFACE STRUCTURE; THIN FILMS; VACUUM DEPOSITION;

AFM; CO-EVAPORATION TECHNIQUES; DEPOSITION EXPERIMENTS; DOPING; EFFUSION CELLS; ELECTRICAL PROPERTIES; FOUR-POINT PROBES; GLASS SUBSTRATES; HALL-EFFECT MEASUREMENTS; P TYPES; P-TYPE; POST-ANNEALING; ROOM TEMPERATURES; SB; SB FILMS; SB-DOPED; STEP METHODS; ULTRA HIGHS; XRD; ZNTE; ZNTE THIN FILMS;

ZINC COMPOUNDS;

EID: 58949092605     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.10.078     Document Type: Article

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