Influence of annealing temperature on the opto-electronic characteristics of ZnTe electrodeposited semiconductors

Materials Chemistry and Physics

Volumn 51, Issue 2, 1997, Pages 130-134

  Kashyout, A B ^a,b   Arico A S ^a   Antonucci, P L ^b,d   Mohamed, F A ^c   Antonucci, V ^a  

^a CNR   (Italy)

^b NATIONAL RESEARCH CENTRE   (Egypt)

^c UNIVERSITY MEDITERRANEA OF REGGIO CALABRIA   (Italy)

^d CNR Inst Transformation S   (Italy)

Author keywords

Chalcogenide semiconductors; Electrodeposition; Photovoltaics; Thin films; Zinc telluride

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTAL DEFECTS; ELECTRIC RESISTANCE; ELECTRODEPOSITION; ENERGY GAP; MORPHOLOGY; OPTOELECTRONIC DEVICES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING ZINC COMPOUNDS; THERMAL EFFECTS; THIN FILMS;

HALL MOBILITY; ZINC TELLURIDE;

SEMICONDUCTING FILMS;

EID: 0031269880     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(97)80281-7     Document Type: Article

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