Optical and electrical characterizations of vertically integrated ZnO nanowires

Microelectronics Journal

Volumn 40, Issue 2, 2009, Pages 224-228

  Latu Romain, E ^a   Gilet, P ^a   Feuillet, G ^a   Noel, P ^a   Garcia, J ^a   Levy F ^a   Chelnokov, A ^a  

^a CEA LETI   (France)

Author keywords

Integration technology; Photoconductivity; Scanning spread resistance microscopy; ZnO nanowires

Indexed keywords

ELECTRIC CONDUCTIVITY; INTEGRATION; LIGHT EMISSION; LUMINESCENCE; NANOWIRES; PHOTOCONDUCTIVITY; PHOTOELECTRICITY; SCANNING; SEMICONDUCTING ZINC COMPOUNDS; TRANSPORT PROPERTIES; ZINC OXIDE;

BAND GAPS; CRYSTAL QUALITIES; INTEGRATION PROCESSES; INTEGRATION TECHNOLOGY; OPTICAL (PET) (OPET); RESISTANCE MICROSCOPY; SCANNING SPREAD RESISTANCE MICROSCOPY; SURFACE DEPLETION; TECHNOLOGICAL PROCESSES; UV-VISIBLE; ZNO NANOWIRES;

ELECTRIC WIRE;

EID: 58749116625     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.07.046     Document Type: Article

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