Strain enhancement in Si induced by direct bonding of a LaAlO3 film to a Si substrate

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 1, 2009, Pages 113-116

  Suzuki, M ^a   Koyama, M ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

HRBS; Interface; LaAlO3; Strain

Indexed keywords

LANTHANUM ALLOYS; OXYGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SILICON COMPOUNDS;

DEPTH PROFILING; HRBS; INTERFACE; INTERFACE REGIONS; ION CHANNELING; LAALO3; LATTICE STRAINS; RUTHERFORD BACKSCATTERING (RBS); SI(2 1 1) SUBSTRATES; STRAIN;

TENSILE STRAIN;

EID: 58749092819     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2008.10.047     Document Type: Article

References (6)

1. International Technology Roadmap for Semiconductors 2006 Edition, .
2. Suzuki M., Yamaguchi T., Fukushima N., and Koyama M. J. Appl. Phys. 103 (2008) 034118
3. Kimura K., Ohshima K., and Mannami M. Appl. Phys. Lett. 64 (1994) 2232
4. Nakajima K., Joumori S., Suzuki M., Kimura K., Osipowicz T., Tok K.L., Zheng J.Z., See A., and Zhang B.C. Appl. Phys. Lett. 83 (2003) 296
5. Chan T.K., Darmawan P., Ho C.S., Malar P., Lee P.S., and Osipowicz T. Nucl. Instr. and Meth. B 266 (2008) 1486
6. Malar P., Chen T.K., Ho C.S., and Osipowicz T. Nucl. Instr. and Meth. B 266 (2008) 1464