Quantum efficiency optimization of InP-BASED In0.53Ga0.47As photodetectors

Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

Volumn 27, Issue 2, 2008, Pages 81-85

  Tian, Zhao Bing ^a,b   Gu, Yi ^a,b   Zhang, Yong Gang ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

InGaAs; Photovoltaic detectors; Quantum efficiency; Short wave infrared

Indexed keywords

QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

ILLUMINATION; OPTICAL RESPONSE; PHOTOVOLTAIC DETECTORS; PHYSICAL MODEL; PIN PHOTODETECTORS; SHORT WAVE INFRARED;

PHOTODETECTORS;

EID: 43749108948     PISSN: 10019014     EISSN: None     Source Type: Journal    
DOI: 10.3724/SP.J.1010.2008.00081     Document Type: Article

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