Effects of hydrostatic pressure on the electron parallel factor and g || factor anisotropy in GaAs-(Ga, Al)As antum wells under magnetic fields

Journal of Physics Condensed Matter

Volumn 20, Issue 46, 2008, Pages

  Porras Montenegro, N ^a,b   Duque, C A ^b,c   Reyes Gomez E ^c   Oliveira, L E ^b,d  

^a UNIVERSIDAD DEL VALLE   (Colombia)

^b UNIVERSITY OF CAMPINAS   (Brazil)

^c UNIVERSIDAD DE ANTIOQUIA   (Colombia)

^d INSTITUTO NACIONAL DE METROLOGIA   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANISOTROPY; ARSENIC; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONS; GALLIUM ALLOYS; HETEROJUNCTIONS; HYDRAULICS; HYDRODYNAMICS; HYDROSTATIC PRESSURE; MAGNETIC ANISOTROPY; MAGNETIC FIELDS; MAGNETIC MATERIALS; MAGNETIC PROPERTIES; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WIRES; WELLS;

APPLIED MAGNETIC FIELDS; EFFECTIVE G FACTORS; ELECTRON G FACTORS; EXPERIMENTAL MEASUREMENTS; NUMERICAL RESULTS; PARABOLICITY; QUANTUM WELLS; SEMI-CONDUCTORS; SEMICONDUCTOR HETEROSTRUCTURES; WELL WIDTHS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 58149357357     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/20/46/465220     Document Type: Article

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