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Journal of Physics and Chemistry of Solids

Volumn 62, Issue 9-10, 2001, Pages 1789-1796

Quantum magneto-transport in two-dimensional GaAs electron gases and SiGe hole gases

(10) Liang, C T a Cheng, Yu Ming a Huang, Tsai Yu a Huang, C F a Simmons, M Y b,c Ritchie, D A b Kim, Gil Ho d Leem, J Y e Chang, Y H a Chen, Y F a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

c UNIVERSITY OF NEW SOUTH WALES (Australia)

d Electronics and Telecommunications Research Institute (ETRI) (South Korea)

e Korea Research Institute of Standards and Science (South Korea)

Author keywords

A. semiconductors; B. epitaxial growth; B. vapour deposition; D. transport properties

Indexed keywords

ACTIVATION ANALYSIS; CARRIER CONCENTRATION; EPITAXIAL GROWTH; HALL EFFECT; MAGNETIC FIELD EFFECTS; PHASE TRANSITIONS; QUANTUM THEORY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS; TRANSPORT PROPERTIES; VAPOR DEPOSITION;

MAGNETORESISTIVITY; MAGNETOTRANSPORT;

ELECTRON GAS;

EID: 0035480010 PISSN: 00223697 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3697(01)00111-1 Document Type: Article

Times cited : (2)

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