Electron Landé g factor in GaAs-(Ga,Al)As quantum wells under applied magnetic fields: Effects of Dresselhaus spin splitting

Journal of Applied Physics

Volumn 104, Issue 2, 2008, Pages

  Reyes Gomez E ^a   Porras Montenegro, N ^b,c   Perdomo Leiva, C A ^d   Brandi, H S ^e,f   Oliveira, L E ^c,f  

^a UNIVERSIDAD DE ANTIOQUIA   (Colombia)

^b UNIVERSIDAD DEL VALLE   (Colombia)

^c UNIVERSITY OF CAMPINAS   (Brazil)

^d INSTITUTO SUPERIOR POLITÉCNICO JOSÉ ANTONIO ECHEVERRÍA   (Cuba)

^e FEDERAL UNIVERSITY OF RIO DE JANEIRO   (Brazil)

^f INSTITUTO NACIONAL DE METROLOGIA   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; HAMILTONIANS; III-V SEMICONDUCTORS; MAGNETIC FIELDS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

ANISOTROPIC EFFECTS; APPLIED MAGNETIC FIELDS; CONDUCTION ELECTRONS; CYCLOTRON-EFFECTIVE MASS; EFFECTIVE HAMILTONIAN; IN-PLANE DIRECTION; QUANTITATIVE AGREEMENT; SPIN-SPLITTING EFFECTS;

GALLIUM ARSENIDE;

EID: 48849105372     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2956698     Document Type: Article

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