Self-organized quantum dots for future semiconductor memories

Journal of Physics Condensed Matter

Volumn 20, Issue 45, 2008, Pages

  Geller, M ^a,b   Marent, A ^a   Nowozin, T ^a   Bimberg, D ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ARSENIDE; CHARGE CARRIERS; DATA STORAGE EQUIPMENT; DYNAMIC RANDOM ACCESS STORAGE; FLASH MEMORY; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; RANDOM ACCESS STORAGE; SEMICONDUCTOR STORAGE;

CARRIER CAPTURES; DEVICE STRUCTURES; DYNAMIC RANDOM ACCESS MEMORIES; INAS/GAAS; MEMORY STRUCTURES; PICO SECONDS; QUANTUM DOTS; RETENTION TIMES; ROOM TEMPERATURES; SEMICONDUCTOR MEMORIES; STORAGE TIMES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 58149345863     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/20/45/454202     Document Type: Article

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