Electrical transport via variable range hopping in an individual multi-wall carbon nanotube

Journal of Physics Condensed Matter

Volumn 20, Issue 47, 2008, Pages

  Khan, Zishan Husain ^a,b   Husain, M ^b   Perng, T P ^c   Salah, Numan ^a   Habib, Sami ^a  

^a KING ABDULAZIZ UNIVERSITY   (Saudi Arabia)

^b JAMIA MILLIA ISLAMIA CENTRAL UNIVERSITY   (India)

^c YUAN ZE UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT CONDUCTION; MULTIWALLED CARBON NANOTUBES (MWCN); NANOCOMPOSITES; NANOTUBES; THREE DIMENSIONAL;

APPLICATIONS.; COMPLEX STRUCTURES; DENSITY OF STATES; ELECTRICAL TRANSPORT MEASUREMENTS; ELECTRICAL TRANSPORTS; HOPPING DISTANCES; HOPPING ENERGIES; INTERESTING INFORMATIONS; LOCALIZATION LENGTHS; MOTT PARAMETERS; TEMPERATURE DEPENDENCES; TEMPERATURE RANGES; THREE DIMENSIONS; TWO DIMENSIONS; VARIABLE RANGE HOPPING;

CARBON NANOTUBES;

EID: 58149280091     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/20/47/475207     Document Type: Article

References (39)

1. Iijima S 1991 Nature 354 56
2. Frank S, Poncharal P, Wang Z L and de Heer W A 1998 Science 280 1744
3. Dresselhaus M S, Dresselhaus G and Eklund P C 1996 Science of Fullerenes and Carbon Nanotubes (San Diego, CA: Academic)
4. Kane C, Balents L and Fisher M P A 1997 Phys. Rev. Lett. 79 5086
5. Kane C L and Mele E J 1997 Phys. Rev. Lett. 78 1932
6. White C T and Todorov T N 1998 Nature 393 240
7. Ogata M and Fukuyama H 1994 Phys. Rev. Lett. 73 468
8. Graugnard E, de Pablo P J, Walsh B, Ghosh A W, Datta S and Reifenberger R 2001 Phys. Rev. B 64 125407
9. Tans S J, Devort M H, Dai H, Thess A, Smalley R E, Geerligs L J and Dekker C 1997 Nature 386 474
10. Bockrath M, Cobden D H, McEuen P L, Chopra N G, Zettl A, Thess A and Smalley R E 1997 Science 275 1922
11. Yosida Y and Oguro I 1999 J. Appl. Phys. 86 999
12. Agrawal M, Raghuveer S, Li H and Ramanath G 2007 Appl. Phys. Lett. 90 193104
13. Ebbesen T W, Lezec H J, Hiura H, Bennett J W, Ghaemi H F and Thio T 1996 Nature 382 54
14. Frank S, Poncharal P, Wang Z L and de Heer W A 1998 Science 280 1744
15. Sanvito S, Kwon Y-K, Tomnek D and Lambert C J 2000 Phys. Rev. Lett. 84 1974
16. Langer L, Bayot V, Grivei E, Issi J-P, Heremans J P, Olk C H, Stockman L, Van Haesendocnk C and Bruynserade Y 1996 Phys. Rev. Lett. 76 479
17. Bachtold, Strunk C, Salevetat J-P, Bonard J-M, Forró L, Nussbaumer T and Schonenberger C 1999 Nature 397 673
18. Altshuler B L and Aronov A G 1979 Solid State Commun. 30 115
19. Huang J Y, Chen S, Jo S H, Wang Z, Han D X, Chen G, Dresselhaus M S and Ren Z F 2005 Phys. Rev. Lett. 94 236802
20. Cao J, Wang Q and Dai H 2005 Nat. Mater. 4 745
21. Xu N, Ding J W and Xing D Y 2008 J. Appl. Phys. 103 083710
22. Choi E S, Brooks J S, Eaton D L, Al-Haik M S, Hussaini Y, Garmestani H, Li D and Dahman K 2003 J. Appl. Phys. 94 6034
23. Wei B, Spolenak R, Redlich P K, Ruhle M and Arzt E 1999 Appl. Phys. Lett. 74 3149
24. Hsiou Y F, Yang Y J, Stobinski L, Kuo W and Chen C D 2004 Appl. Phys. Lett. 84 984
25. Balasubramanian K, Fan Y, Burghad M and Kern K 2004 Appl. Phys. Lett. 84 2400
26. Jang W Y, Kulkarni N N, Shih C K and Yao Z 2004 Appl. Phys. Lett. 84 1177
27. Kong J, Zhou C, Morpurgo A, Soh H T, Quate C F, Marcus C and Dai H 1999 Appl. Phys. A 69 305
28. Khan Z H, Malik M M, Zulfequar M and Husain M 1995 J. Phys.: Condens. Matter 7 8979
29. Mott N F and Davis E A 1970 Electronic Processes in Non-Crystalline Materials (Oxford: Clarendon)
30. Mott N F 1970 Phil. Mag. 22 7
31. Mott N F and Davis E A 1970 Phil. Mag. 22 903
32. Mott N F 1975 Phil. Mag. 32 961
33. Mott N F 1969 Phil. Mag. 19 835
34. Shiraishi M, Ramm M and Ata M 2002 Appl. Phys. A 74 613
35. Aggarwal M, Khan S, Husain M, Ming T C, Tsai M Y, Perng T P and Khan Z H 2007 Eur. Phys. J. B 60 319
36. Aggarwal M, Husain M, Khan S and Khan Z H 2007 J. Nanopart. Res. 9 1047
37. Gao H, Mu C, Wang F, Xu D, Wu K, Xie Y, Liu S, Wang E, Xu J and Yu D 2003 J. Appl. Phys. 93 5602
38. Shklovskii B I and Efros A L 1984 Electronic Properties of Doped Semiconductors (Berlin: Springer)
39. Jang W Y, Kulkarni N N, Shih C K and Yao Z 2004 Appl. Phys. Lett. 84 1177