Electrical characterization of N- and P-doped hole and electron only organic devices

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 10, 2008, Pages 5606-5609

  Park, Tae Jin ^a   Kim, Sun Young ^a   Jeon, Woo Sik ^a   Park, Jung Joo ^a   Pode, Ramchandra ^a   Jang, Jin ^a   Kwon, Jang Hyuk ^a  

^a Kyung Hee University   (South Korea)

Author keywords

Doping; n Type; OLED; p Type

Indexed keywords

DI-AMINES; DOPED HOLES; DOPING; DOPING MATERIALS; ELECTRICAL CHARACTERIZATIONS; ELECTRON TRANSPORTS; HOLE TRANSPORTS; LOW RESISTANCES; MOLYBDENUM OXIDES; N-TYPE; OLED; OPTIMAL CONDITIONS; ORGANIC DEVICES; P-TYPE; PHENANTHROLINE; PROCESS MARGINS; TUNGSTEN OXIDES; VOLTAGE CHARACTERISTICS;

AMINES; CESIUM; DOPING (ADDITIVES); ELECTRONS; HELMET MOUNTED DISPLAYS; MOLYBDENUM; MOLYBDENUM COMPOUNDS; ORGANIC LIGHT EMITTING DIODES (OLED); ORGANIC POLYMERS; PHOSPHORUS; TUNGSTEN; TUNGSTEN COMPOUNDS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 58149269834     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2008.1434     Document Type: Conference Paper

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