Transport study of ultra-thin SOI MOSFETs

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 19, Issue 1-2, 2003, Pages 39-43

  Naser, B ^a   Cho, K H ^b   Hwang, S W ^b,d   Bird, J P ^a   Ferry, D K ^a   Goodnick, S M ^a   Park, B G ^c   Ahn, D ^d  

^a Arizona State University   (United States)

^b Korea University   (South Korea)

^c Seoul National University   (South Korea)

^d University of Seoul   (South Korea)

Author keywords

Effective mobility; SOI; Temperature

Indexed keywords

ACTIVATION ENERGY; ELECTRON MOBILITY; INTERFACES (MATERIALS); SILICON ON INSULATOR TECHNOLOGY;

EFFECTIVE MOBILITY;

MOSFET DEVICES;

EID: 0042510473     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(03)00326-6     Document Type: Conference Paper

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