Role of boundary roughness in the electronic transport of Bi nanowires

Journal of Applied Physics

Volumn 104, Issue 12, 2008, Pages

  Huber, T E ^a   Nikolaeva, A ^b,c   Gitsu, D ^b   Konopko, L ^b,c   Graf, M J ^d  

^a HOWARD UNIVERSITY   (United States)

^b ASM   (Moldova)

^c International High Magnetic Field and Low Temperatures Laboratory   (Poland)

^d BOSTON COLLEGE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; CARRIER MOBILITY; ELECTRIC RESISTANCE; ELECTRIC WIRE; ELECTRON MOBILITY; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; NANOWIRES; WIRE;

ALUMINA MATRIXES; BI NANOWIRES; BISMUTH NANOWIRES; BOUNDARY ROUGHNESSES; ELECTRONIC TRANSPORTS; FERMI ENERGIES; HIGH TEMPERATURES; LANDAU LEVELS; LOW TEMPERATURES; MOBILITY BEHAVIORS; ORDERS OF MAGNITUDES; TEMPERATURE DEPENDENTS; THERMOPOWER; TRIGONAL CRYSTALLINE; WIRE LENGTHS;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 58149247754     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3041491     Document Type: Article

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