Confinement effects and surface-induced charge carriers in Bi quantum wires

Applied Physics Letters

Volumn 84, Issue 8, 2004, Pages 1326-1328

  Huber, T E ^a   Nikolaeva, A ^b   Gitsu, D ^b   Konopko, L ^b   Foss Jr , C A ^c   Graf, M J ^d  

^a HOWARD UNIVERSITY   (United States)

^b INSTITUTE OF APPLIED PHYSICS   (Moldova)

^c GEORGETOWN UNIVERSITY   (United States)

^d BOSTON COLLEGE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DENSITY; SURFACE AREAS;

ANISOTROPY; ANODIC OXIDATION; BISMUTH; CARRIER MOBILITY; CHARGE CARRIERS; ELECTRODES; FERMI LEVEL; MAGNETIC FIELDS; MAGNETORESISTANCE; MATHEMATICAL MODELS;

SEMICONDUCTOR QUANTUM WIRES;

EID: 1642272201     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1650038     Document Type: Article

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