Analysis of the hump characteristics in poly-Si thin film transistor

ECS Transactions

Volumn 3, Issue 8, 2006, Pages 63-67

  Kim, Soopool ^a   Oh, Jae Young ^a   Yang, Joon Young ^a   Yang, Myoung Su ^a   Chung, In Jae ^a  

^a LG Display Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; GATES (TRANSISTOR); POLYSILICON; PRODUCT DESIGN;

CHANNEL EDGE; EDGE STEP ACTIVE (ESA); FRINGING FIELD; HUMP CHARACTERISTICS;

THIN FILM TRANSISTORS;

EID: 33846977765     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2356335     Document Type: Conference Paper

References (3)

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2. P. Sallagoity, M. Ada-Hanifi, M. Paoli, and M. Haond, IEEE Trans. Electron Device., 43, 1903 (1996).
3. N. Shigo, S. Fukuda, T. Wada, K. Hieda, IEEE Trans. Electron Device., 35, p.945 (1988).