Thermal expansion of silicon at temperatures up to 1100 °C

Journal of Materials Processing Technology

Volumn 209, Issue 2, 2009, Pages 723-727

  Mazur, Alexander V ^a   Gasik, Michael M ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

CVD; Dilatometry; Silicon; Single crystal; Strain; Thermal expansion

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; DILATOMETERS; NONMETALS; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; THERMAL EXPANSION; THERMAL SPRAYING; THERMAL STRESS; THERMOANALYSIS; X RAY DIFFRACTION ANALYSIS;

CRYSTAL SILICONS; CRYSTALLOGRAPHIC ORIENTATIONS; CVD; DILATOMETRY; EXPERIMENTAL VALUES; PHASE TRANSFORMATIONS; TEMPERATURE RANGES; THERMAL ANALYSIS; X-RAY DIFFRACTIONS;

SILICON WAFERS;

EID: 58149174392     PISSN: 09240136     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmatprotec.2008.02.041     Document Type: Article

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