Carrier lifetime limitation defects in polycrystalline silicon ribbons grown on substrate (RGS)

Materials Science in Semiconductor Processing

Volumn 11, Issue 1, 2008, Pages 20-24

  Lu, Jinggang ^a   Rozgonyi, George A ^a   Schönecker, Axel ^b  

^a North Carolina State University   (United States)

^b TNO   (Netherlands)

Author keywords

Carrier lifetime; Dislocations; EBIC; Oxygen precipitation; Polycrystalline silicon

Indexed keywords

CIVIL AVIATION; DEFECT DENSITY; DEFECTS; INFRARED SPECTROSCOPY; NONMETALS; OXYGEN; POLYSILICON; PRECIPITATION (CHEMICAL); SPECTROSCOPIC ANALYSIS;

CARBON CONTENTS; CARRIER RECOMBINATIONS; DEFECT ETCHINGS; DISLOCATIONS; EBIC; FREE GRAINS; HETEROGENEOUS NUCLEATIONS; LIFE-TIMES; OXYGEN IMPURITIES; OXYGEN PRECIPITATES; OXYGEN PRECIPITATION; POLYCRYSTALLINE SILICON;

CARRIER LIFETIME;

EID: 58149161878     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2008.07.001     Document Type: Article

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