An active gate drive circuit for high power inverter system to reduce turn-off spike voltage of IGBT

7th Internatonal Conference on Power Electronics, ICPE'07

Volumn , Issue , 2007, Pages 127-131

  Kim, Jin Hong ^a   Park, Dong Hyun ^a   Kim, Jeong Bin ^a   Kwon, Bong Hyun ^a  

^a LS Industrial Systems Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INVERTERS; TIMING CIRCUITS;

ACTIVE GATE DRIVES; COLLECTOR CURRENTS; COLLECTOR-EMITTER VOLTAGE; DC LINK CAPACITOR; HIGH-POWER INVERTERS; SATURATION VOLTAGE; SNUBBER CIRCUIT; STRAY INDUCTANCES;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 58149094621     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICPE.2007.4692362     Document Type: Conference Paper

References (11)

1. Caponet. M.C, Profumo. F, De Doncker. R.W, Tenconi.A, "Low Stray Inductance Bus Bar Design and Construction for Good EMC Performance in Power Electronic Circuits," in Rec. of 2000 IEEE Power Electronics Specialists Conf.(PESC),June 2000, pp. 916-921.
2. Hughes.K.B, Schauder C.D, Gernhardt.M.G, Stacey.E.J, "Effect of Snubber Circuit Parameters on the Turn off Voltage Spike of Large GTO Thyristors" in Rec. of 1993 IEEE Industry Applications Society Annual Meeting, Oct. 1993 pp. 1280-1285.
3. Harada. K, Ninomiya. T, "Optimum Design of a Nondissipative Snubber," in Rec. of 1994 IEEE Power Electronics Specialists Conf.(PESC), June 1994, pp. 1188-1195.
4. Weis.B, Bruckmann.M, "A New Gate Driver Circuit for Improved Turn-off Characteristics of High Current IGBT Modules" in Rec. of 1998 IEEE Industry Applications Society Annual Meeting, Oct. 1998 pp. 1073-1077.
5. John.V, Bum-Seok Suh, Lipo.T.A, "High-Performance Active Gate Drive for High-Power IGBTs" in Rec. of 1998 IEEE Industry Applications Society Annual Meeting, Oct. 1998 pp. 1519-1529.
6. Kimata. M, Chikai. S, Tanaka. T, Ishii.K, "High Performance Gate Drive Circuit of High Voltage IPMs(HVIPMs)" in Proc. of 1998 IEEE Power Electronics Specialists Conf.(PESC), May. 1998 pp.1196-1200.
7. Shihong Park. Jahn. T.M, "Flexible dv/dt and di/dt Control Method for Insulated Gate Power Switch" in Rec. of 2001 IEEE Industry Applications Society Annual Meeting, Sept. 2001 pp. 1038-1045.
8. Idir. N, Bausiere. R, Franchaud.J J, "Active Gate Voltage Control of Turn-on didt and Turn-off dvdt in Insulated Gate Transistors" in Rec. of 2006 IEEE Power electronics, July 2006 pp. 849-855.
9. Chokhawala.R, Catt J, Pelly B, "Gate Drive Consideration for IGBT Modules" in Rec. of 1992 IEEE Industry Applications Society Annual Meeting, Oct. 1992 pp. 1186-1195.
10. Chokhawala R.S, Sobhani.S, "Switching Voltage Transient Protection Schemes for High-Current IGBT modules" in Rec. of 1997 IEEE Industry Applications Society Annual Meeting, Nov/Dec. 1997 pp. 1601-1610.
11. Dulau.L Pontarollo.S, Boimond.A, Gamier . J-F, Giraudo.N, Terrasse. O, "A new Gate Driver integrated Circuit for IGBT devices with advanced protections" in Rec. of 2006 IEEE Power electronics, Jan 2006 pp 38-44.