First-principles study of diffusion of zinc vacancies and interstitials in ZnO

Solid State Communications

Volumn 149, Issue 5-6, 2009, Pages 199-204

  Huang, Gui Yang ^a   Wang, Chong Yu ^a,b   Wang, Jian Tao ^c  

^a TSINGHUA UNIVERSITY   (China)

^b INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

^c INSTITUTE OF PHYSICS   (China)

Author keywords

A. Semiconductors; C. Point defects; D. Thermodynamic properties

Indexed keywords

CRYSTALS; DIFFUSION; ELECTRIC CONDUCTIVITY; POINT DEFECTS; POLYNOMIAL APPROXIMATION; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM DOTS; THERMODYNAMIC PROPERTIES; THERMODYNAMICS; VACANCIES; ZINC OXIDE;

A. SEMICONDUCTORS; AB INITIO TOTAL ENERGIES; C -AXIS; C. POINT DEFECTS; D. THERMODYNAMIC PROPERTIES; GENERALIZED GRADIENT APPROXIMATIONS; INTERSTITIAL DIFFUSIONS; INTERSTITIALS; LOCAL DENSITIES; MIGRATION BARRIERS; ZINC VACANCIES;

ZINC;

EID: 58149091664     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2008.11.016     Document Type: Article

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